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FGA40N60UFD IGBT FGA40N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features * * * * High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3P GCE E TC = 25C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C FGA40N60UFD 600 20 40 20 160 15 160 160 64 -55 to +150 -55 to +150 300 Units V V A A A A A W W C C C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.77 1.7 40 Units C/W C/W C/W (c)2003 Fairchild Semiconductor Corporation FGA40N60UFD Rev. A FGA40N60UFD Electrical Characteristics of the IGBT T Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V IC = 40A, VGE = 15V 3.5 --5.1 2.3 3.1 6.5 3.0 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1075 170 50 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------15 30 65 35 470 130 600 30 37 110 80 500 310 810 77 20 25 14 --130 100 --1000 --200 250 --1200 150 30 40 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 125C VCE = 300 V, IC = 20A, VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge C = 25C unless otherwise noted Test Conditions TC = 25C IF = 15A TC = 100C TC = 25C TC = 100C IF = 15A, di/dt = 200A/us TC = 25C TC = 100C TC = 25C TC = 100C Min. --------- Typ. 1.4 1.3 50 74 4.5 6.5 80 220 Max. 1.7 -95 -6.0 -180 -- Units V ns A nC (c)2003 Fairchild Semiconductor Corporation FGA40N60UFD Rev. A FGA40N60UFD 160 Common Emitter Tc = 25 20V 80 70 Common Emitter V GE=15V Tc= 25 Tc= 125 Collector Current, I c (A) 120 Collector Current , Ic (A) 8 15V 60 50 40 30 20 10 80 12V VGE = 10V 40 0 0 2 4 6 0 0.5 1 10 Collector-Emitter Voltage,VCE(V) Collector-Emitter Voltage, V CE(V) Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage 4 Common Emitter Vge=15V 30 Vcc = 300V Load Current : peak of square wave 25 Collector - Emitter Voltage, VCE [V] 3 40A 2 20A Ic=10A Load Current [A] 20 15 10 1 5 0 0 30 60 90 120 150 Duty cycle : 50% Tc = 100 Powe Dissipation = 32W 0.1 1 10 100 1000 0 Case Temperature, T C [] Frequency [kHz] Fig. 1 Fig3.Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter TC = 25 16 20 Common Emitter TC = 125 16 [V] CE Collector - Emitter Voltage, V 12 Collector - Emitter Voltage, V CE [V] 12 8 40A 4 Ic=10A 0 20A 20 8 40A 4 IC = 10A 0 0 4 8 20A 12 16 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE (c)2003 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE FGA40N60UFD Rev. A FGA40N60UFD 3000 Common Emitter VGE = 0V, f = 1MHz TC = 25 Cies 300 Common Emitter Vcc=300V,VGE= 15V Ic=20A Tc = 25 Tc = 125 2500 Ton Switching Time (ns) Capacitance (pF) 2000 Coes 1500 100 Tr 1000 Cres 500 0 1 10 30 10 1 10 100 200 Collector-Emitter Voltage, VCE (V) Gate Resistance, RG( ) Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Common Emitter Vcc=300V,V GE= 15V Ic=20A Tc = 25 Tc = 125 2000 Common Emitter Vcc=300V,VGE= 15V Ic=20A Tc = 25 Tc = 125 1000 Switching Time (ns) Switching Time (uJ) Toff Eon Eoff 100 Tf 100 Tf 20 1 10 100 200 50 1 10 100 200 Gate Resistance, RG( ) Gate Resistance, RG( ) Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 200 1000 100 Switching Time (ns) Switching Time [nS] Common Emitter VCC = 300V, VGE = 15V RG = 10 T C = 25 T C = 125 Toff 100 Toff Tf Ton Common Emitter VCC = 300V, V GE = 15V R G = 10 T C = 25 T C = 125 15 20 25 30 35 40 10 Tr Tf 20 10 10 15 20 25 30 35 40 Collector Current, Ic (A) Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current (c)2003 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current FGA40N60UFD Rev. A FGA40N60UFD 3000 15 Common Emitter RL=15 (Tc=25 ) 300V 9 200V Vcc=100V 6 Gate-Emitter Voltage, V GE (V) 1000 12 Switching Time (uJ) Eon 100 Eoff Eoff Common Emitter VCC = 300V, VGE = 15V RG = 10 TC = 25 TC = 125 15 20 25 30 35 40 3 10 10 0 0 30 60 90 120 Collector Current , Ic (A) Gate Charge, Qg (nC) Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 500 IC MAX. (Pulsed) 100 500 100 100us 1 Collector Current, I C [A] IC MAX. (Continuous) 10 DC Operation 1 Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 0.3 1 10 Collector Current, IC [A] 50us 10 1 Safe Operating Area VGE =20V, T C=100 C 100 1000 0.1 1 10 100 1000 o 0.1 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 1 0.5 Thermal Response, Zthjc [/W] 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 1E-3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT (c)2003 Fairchild Semiconductor Corporation FGA40N60UFD Rev. A FGA40N60UFD 100 T C = 25 T C = 100 100 VR = 200V IF = 15A T C = 25 T C = 100 Reverse Recovery Current, Irr [A] 0 1 2 3 Forward Current, I F [A] 10 10 1 1 100 1000 Forward Voltage Drop, VF [V] di/dt [A/us] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 800 120 V R = 200V IF = 15A T C = 25 T C = 100 VR = 200V IF = 15A TC = 25 TC = 100 Stored Recovery Charge, Qrr [nC] 600 Reverce Recovery Time, t rr [ns] 1000 100 80 400 60 200 40 0 100 20 100 1000 di/dt [A/us] di/dt [A/us] Fig 20. Stored Charge Fig 21. Reverse Recovery Time (c)2003 Fairchild Semiconductor Corporation FGA40N60UFD Rev. A FGA40N60UFD Package Dimensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 (c)2003 Fairchild Semiconductor Corporation FGA40N60UFD Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet seriesTM FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2003 Fairchild Semiconductor Corporation Rev. I2 |
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